Fujitsu and University of Toronto Develop High-Reliability Read-Method for Spin-Torque-Transfer MRAM, Next-Generation Non-Volatile Memory; Major Step Toward Practical Use in Devices by Replacing Flash Memory
ENP Newswire 2010, Feb 10
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Publisher Description
ENPNewswire-10 February 2010-Fujitsu and University of Toronto Develop High-Reliability Read-Method for Spin-Torque-Transfer MRAM, Next-Generation Non-Volatile Memory; Major step toward practical use in devices by replacing flash memory(C)2010 ENPublishing - http://www.enpublishing.co.uk Release date- 10022010 - Kawasaki, Japan and Toronto, Canada - Fujitsu Laboratories Limited and the University of Toronto today announced that they have jointly developed the world's first high-reliability read-method for use with spin-torque-transfer (STT) MRAM(1) that is insusceptible to erroneous writes.
GENRE
Business & Personal Finance
RELEASED
2010
10 February
LANGUAGE
EN
English
LENGTH
5
Pages
PUBLISHER
Normans Media Ltd.
SELLER
The Gale Group, Inc., a Delaware corporation and an affiliate of Cengage Learning, Inc.
SIZE
82.8
KB
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