Strained-Si Heterostructure Field Effect Devices Strained-Si Heterostructure Field Effect Devices
Series in Materials Science and Engineering

Strained-Si Heterostructure Field Effect Devices

C.K. Maiti and Others
    • $399.99
    • $399.99

Publisher Description

A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

GENRE
Science & Nature
RELEASED
2007
11 January
LANGUAGE
EN
English
LENGTH
440
Pages
PUBLISHER
CRC Press
SELLER
Taylor & Francis Group
SIZE
41.2
MB
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