Strained-Si Heterostructure Field Effect Devices Strained-Si Heterostructure Field Effect Devices
Series in Materials Science and Engineering

Strained-Si Heterostructure Field Effect Devices

C.K. Maiti y otros
    • USD 279.99
    • USD 279.99

Descripción editorial

A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

GÉNERO
Ciencia y naturaleza
PUBLICADO
2007
11 de enero
IDIOMA
EN
Inglés
EXTENSIÓN
440
Páginas
EDITORIAL
CRC Press
VENDEDOR
Taylor & Francis Group
TAMAÑO
41.2
MB
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