Fujitsu Develops World's First Gallium-Nitride HEMT Able to Cut Power in Standby Mode and Achieve High Output

Tokyo, Oct 10, 2008 - (JCN Newswire) - Fujitsu Limited and Fujitsu Laboratories Ltd. today announced the development of a new type of gallium nitride (GaN)(1) -based high electron mobility transistor (HEMT)(2) that features a new structure ideal for use in amplifiers for microwave(3) and millimeter-wave(4) transmissions, frequency ranges for which usage is expected to grow. In a technological first, a novel transistor structure was developed that achieves high output of over 100 watts and enables power to be cut when the transistor is in standby mode. This technological advance will contribute to higher output and lower power consumption in microwave and millimeter-wave transmission amplifiers for high-speed wireless communications. Details of the new technology were presented at the International Symposium on Compound Semiconductors (ISCS), held in Rust, Germany from September 21 - 24. Certain aspects of research for this new technology were conducted as part of the Research and Development Project for Expansion of Radio Spectrum Resources, sponsored by Japan's Ministry of Internal Affairs and Communications.