![GaN-Based Laser Diodes](/assets/artwork/1x1-42817eea7ade52607a760cbee00d1495.gif)
![GaN-Based Laser Diodes](/assets/artwork/1x1-42817eea7ade52607a760cbee00d1495.gif)
![](/assets/artwork/1x1-42817eea7ade52607a760cbee00d1495.gif)
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GaN-Based Laser Diodes
Towards Longer Wavelengths and Short Pulses
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- 87,99 €
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- 87,99 €
Publisher Description
The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.