Low Power and Reliable SRAM Memory Cell and Array Design Low Power and Reliable SRAM Memory Cell and Array Design
Springer Series in Advanced Microelectronics

Low Power and Reliable SRAM Memory Cell and Array Design

    • US$139.99
    • US$139.99

출판사 설명

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

장르
전문직 및 기술
출시일
2011년
8월 18일
언어
EN
영어
길이
156
페이지
출판사
Springer Berlin Heidelberg
판매자
Springer Nature B.V.
크기
5
MB
VLSI Design and Test VLSI Design and Test
2022년
VLSI Design and Test VLSI Design and Test
2019년
VLSI Design and Test VLSI Design and Test
2019년
Model and Design of Improved Current Mode Logic Gates Model and Design of Improved Current Mode Logic Gates
2019년
Magnetic Memory Technology Magnetic Memory Technology
2020년
VLSI Design and Test VLSI Design and Test
2017년
Load-Pull Techniques with Applications to Power Amplifier Design Load-Pull Techniques with Applications to Power Amplifier Design
2012년
Electronic Devices for Analog Signal Processing Electronic Devices for Analog Signal Processing
2011년
Adiabatic Logic Adiabatic Logic
2011년
Electromagnetic Vibration Energy Harvesting Devices Electromagnetic Vibration Energy Harvesting Devices
2012년
High-Performance D/A-Converters High-Performance D/A-Converters
2012년
Inside Solid State Drives (SSDs) Inside Solid State Drives (SSDs)
2018년